Electronic and semiconductor device field

Technological innovation in electronic and semiconductor devices, which form the foundation of modern industry, has been supported by the miniaturization of wiring technology in large-scale integrated circuits. As we move into the 7nm generation, many challenges remain in achieving further miniaturization, and the challenges in the constituent elemental technologies must be resolved. To date, our laboratory has developed a technology for depositing high-melting-point thin film materials at low temperatures, which was previously difficult, and is conducting research and development aimed at improving the thermal stability of fine wiring materials and diffusion-blocking films.

Low temperature (Ts/Tm < 0.1)
epitaxial growth of HfN/MgO(001)
via reactive HiPIMS with
metal-ion synchronized substrate bias

Low-temperature epitaxial growth of hafnium nitride thin films on MgO substrates using substrate pulse bias voltage delay synchronization technique in HiPIMS method

Low temperature growth of
stress-free single phase α-W films
using HiPIMS with
synchronized pulsed substrate bias

Low-temperature formation of stress-free tungsten thin films using delay synchronization technique of substrate pulse bias voltage in the HiPIMS method

Electronic and semiconductor device field

Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

Low temperature growth of stress-free single phase α-W films using HiPIMS with synchronized pulsed substrate bias

The research findings of this paper have been published in an article on Eurek Alert!

Low temperature (Ts/Tm < 0.1)
epitaxial growth of HfN/MgO(001)
via reactive HiPIMS with
metal-ion synchronized substrate bias

Low temperature growth of
stress-free single phase α-W films
using HiPIMS with
synchronized pulsed substrate bias